Effect of oxygen vacancies on spin-dependent tunneling in Fe/MgO/Fe
نویسندگان
چکیده
Effect of oxygen vacancies on spin-dependent tunneling in Fe/MgO/Fe" (2007). Faculty Publications from Nebraska Center for Materials and Nanoscience. 21.
منابع مشابه
Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions
Effect of interface states on spin-dependent tunneling in Fe/MgO/ Fe tunnel junctions" (2005).
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In this paper, spin-dependent electrical transport properties are investigated in a single-crystal magnetic tunnel junction (MTJ) which consists of two ferromagnetic Fe electrodes separated by an MgO insulating barrier. These properties contain electric current, spin polarization and tunnel magnetoresistance (TMR). For this purpose, spin-dependent Hamiltonian is described for Δ1 and Δ5 bands in...
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Calculation of the tunneling magnetoresistance ~TMR! of an epitaxial Fe/MgO/Fe~001! junction is reported. The conductances of the junction in its ferromagnetic and antiferromagnetic configurations are determined without any approximations from the real-space Kubo formula using tight-binding bands fitted to an ab initio band structure of iron and MgO. The calculated optimistic TMR ratio is in ex...
متن کاملDisorder, defects, and band gaps in ultrathin (001) MgO tunnel barrier layers
We report scanning tunneling spectroscopy studies of the electronic structure of 1.5–3 nm 001 textured MgO layers grown on 001 Fe. Thick MgO layers exhibit a bulklike band gap, 5–7 eV, and sparse, localized defect states with characteristics attributable to oxygen and, in some cases, Mg vacancies. Thin MgO layers exhibit an electronic structure indicative of interacting defect states forming ba...
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تاریخ انتشار 2013